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FFSH20120A ? silicon carbide schottky diode semiconductor components industries, llc, 2017 publication order number: february, 2017, rev.1.0 FFSH20120A 1 www.onsemi.com absolute maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter ratings unit v rrm peak repetitive reverse voltage 1200 v e as single pulse avalanche energy (note 1) 200 mj i f continuous rectified forward current @ t c < 153 o c 20 a continuous rectified forward current @ t c < 135 c 30 i f, max non-repetitive peak forward surge current t c = 25 o c, 10 s1190a t c = 150 o c, 10 s 990 a i f, s m n o n - r e p e t i t i v e f o r w a r d s u r g e c u r r e n t h a l f - s i ne pulse, t p = 8.3 ms 135 a i f, r m repetitive forward surge current half-sine pulse, t p = 8.3 ms 74 a ptot power dissipation t c = 25 o c 273 w t c = 150 o c 46 w t j , t stg operating and storage temperature range -55 to +175 o c symbol parameter ratings unit r jc thermal resistance, junction to case, max. 0.55 o c/w FFSH20120A silicon carbide schottky diode 1200 v, 20 a features ? max junction temperature 175 o c ? avalanche rated 200 mj ? high surge current capacity ? positive temperature coefficient ? ease of paralleling ? no reverse recovery / no forward recovery applications ? general purpose ? smps, solar inverter, ups ? power switching circuits description silicon carbide (sic) schottky diodes use a completely new technology that provides super ior switching performance and higher reliability compared to si licon. no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor. system benefits include highest efficiency, faster operating frequency, increased power density, reduced emi, and reduced system size and cost. 1. cathode 2. anode to-247-2l 1 2
FFSH20120A ? silicon carbide schottky diode www.onsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted. typical characteristics t j = 25 c unless otherwise noted. figure 1. forward characteristics figure 2. reverse characteristics figure 3. reverse characteristics figure 4. current derating part number top mark package packing method reel size tape width quantity FFSH20120A FFSH20120A to-247-2l tube n/a n/a 30 units symbol parameter test conditions min. typ. max. unit v f forward voltage i f = 20 a, t c = 25 o c - 1.45 1.75 v i f = 20 a, t c = 125 o c-1.72 i f = 20 a, t c = 175 o c-22.4 i r reverse current vr = 1200 v, t c = 25 o c - - 200 a vr = 1200 v, t c = 125 o c - - 300 vr = 1200 v, t c = 175 o c - - 400 q c total capacitive charge v = 800 v - 120 - nc c total capacitance v r = 1 v, f = 100 khz - 1220 - pf v r = 400 v, f = 100 khz - 111 - v r = 800 v, f = 100 khz - 88 - 01234 0 10 20 30 40 i f , forward current (a) v f , forward current (v) t j = 175 o c t j = 125 o c t j = -55 o c t j = 25 o c t j = 75 o c 200 400 600 800 1000 1200 10 -3 10 -2 10 -1 10 0 10 1 i r , reverse current ( a) v r , reverese voltage (v) t j = 175 o c t j = 125 o c t j = -55 o c t j = 25 o c t j = 75 o c 1000 1100 1200 1300 1400 1500 0.0 0.2 0.4 0.6 0.8 1.0 i r , reverse current (ma) v r , reverse voltage (v) t j = 175 o c t j = 125 o c t j = -55 o c t j = 25 o c t j = 75 o c 25 50 75 100 125 150 175 0 50 100 150 200 250 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.7 d = 1 i f , peak forward current (a) t c , case temperature ( o c ) notes: 1: eas of 200 mj is based on starting t j = 25 c, l = 0.5 mh, i as = 29 a, v = 150 v.
FFSH20120A ? silicon carbide schottky diode www.onsemi.com 3 typical characteristics t j = 25 c unless otherwise noted. figure 5. power derating figure 6. capacitive charge vs. reverse voltage 0 200 400 600 800 1000 0 25 50 75 100 125 150 q c , capacitive charge (nc) v r , reverse voltage (v) 25 50 75 100 125 150 175 0 50 100 150 200 250 300 p tot , power dissipation (w) t c , case temperature ( o c ) 0 200 400 600 800 1000 0 10 20 30 40 50 e c , capacitive energy ( p j) v r , reverve voltage (v) 0.1 1 10 100 1000 100 1000 50 5000 capacitance (pf) v r , reverese voltage (v) figure 7. capacitance vs. reverse voltage figure 8. capacitance stored energy figure 9. junction-to-case transient thermal response curve 10 -4 10 -3 10 -2 10 -1 1 0.1 1 2 duty circle-descending order single pulse 0.01 0.02 0.05 0.1 0.2 0.5 normalized thermal impedance, z t jc t, rectangular pulse duration (sec) notes: z t jc (t) = r(t) x r t jc r t jc = 0.55 o c/w duty cycle, d = t 1 / t 2 peak t j = p dm x z t jc (t) + t c p dm t 1 t 2
FFSH20120A ? silicon carbide schottky diode www.onsemi.com 4 test circuit and waveforms figure 10. unclamped inductive switching test circuit & waveform l = 0.5mh
15.87 15.37 e 5.20 4.96 3.93 3.69 20.82 20.32 16.25 15.75 1.77 1.53 1.35 1.17 5.56 11.12 1.60 5.58 5.34 4.13 3.53 a 4.82 4.58 2.66 2.29 0.71 0.51 1.70 1.30 b 3.65 3.51 6.85 6.61 12.81 min 16.77 16.37 2.66 2.42 0.15 12.30 11.90 1.35 0.51 1 2 3 notes: unless otherwise specified. a. package reference: jedec to-247, issue e, variation ab, dated june, 2004. b. dimensions are exclusive of burrs, mold flash, and tie bar extrusions. c. all dimensions are in millimeters. d. drawing conforms to asme y14.5 - 2009. e does not comply jedec standard value. f. drawing filename: mkt-to247b02_rev04. g. fairchild semiconductor. 1 3 2 e e e e e e e e 0.254 m b a m 0.254 m b a m
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc
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